IRF1312PBF MOSFET Power Electronics High-Performance High-Reliability Solution for Your Applications

IRF1312PBF MOSFET Power Electronics High-Performance High-Reliability Solution for Your Applications

Description: This is an advanced power MOSFET designed for use in a wide variety of switching applications.

Parameters:

• Drain-Source Voltage (VDS): 100V

• Continuous Drain Current (ID): 12A

• Pulsed Drain Current (IDM): 30A

• Drain-Source On-Resistance (RDS(on)): 0.02ohm

• Gate-Source Voltage (VGS): ±20V

• Power Dissipation (PD): 40W

• Operating Temperature Range: -55°C to +150°C

• Mounting Type: Through Hole

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