IRGB4062DPBF MOSFET Power Electronics High Performance Low Loss High Current Switching.

IRGB4062DPBF MOSFET

Power Electronics High Performance Low Loss High Current Switching.

Description:

The IRGB4062DPBF is a N-channel MOSFET, housed in a TO-252 package. It is designed for use in a variety of applications, including power management, power conversion, and power switching.

Features:

- N-channel, low-voltage, high-performance MOSFET
- Maximum Drain-Source Voltage: 60V
- Drain-Source On-State Resistance: 0.43 Ohm
- Maximum Gate-Source Voltage: 20V
- Maximum Power Dissipation: 3.2W
- Operating Temperature Range: -55°C to +150°C
- Package Type: TO-252

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